Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHH20N50E-T1-GE3

SIHH20N50E-T1-GE3

For Reference Only

Part Number SIHH20N50E-T1-GE3
PNEDA Part # SIHH20N50E-T1-GE3
Description MOSFET N-CH 500V 22A POWERPAK8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 28,668
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHH20N50E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHH20N50E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHH20N50E-T1-GE3, SIHH20N50E-T1-GE3 Datasheet (Total Pages: 7, Size: 144.04 KB)
PDFSIHH20N50E-T1-GE3 Datasheet Cover
SIHH20N50E-T1-GE3 Datasheet Page 2 SIHH20N50E-T1-GE3 Datasheet Page 3 SIHH20N50E-T1-GE3 Datasheet Page 4 SIHH20N50E-T1-GE3 Datasheet Page 5 SIHH20N50E-T1-GE3 Datasheet Page 6 SIHH20N50E-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIHH20N50E-T1-GE3 Datasheet
  • where to find SIHH20N50E-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIHH20N50E-T1-GE3
  • SIHH20N50E-T1-GE3 PDF Datasheet
  • SIHH20N50E-T1-GE3 Stock

  • SIHH20N50E-T1-GE3 Pinout
  • Datasheet SIHH20N50E-T1-GE3
  • SIHH20N50E-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIHH20N50E-T1-GE3 Price
  • SIHH20N50E-T1-GE3 Distributor

SIHH20N50E-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs147mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs84nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2063pF @ 100V
FET Feature-
Power Dissipation (Max)174W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

The Products You May Be Interested In

IPB073N15N5ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™-5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

114A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

7.3mOhm @ 57A, 10V

Vgs(th) (Max) @ Id

4.6V @ 160µA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4700pF @ 75V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP120N06S402AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15750pF @ 25V

FET Feature

-

Power Dissipation (Max)

188W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IRF7705

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2774pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSSOP

Package / Case

8-TSSOP (0.173", 4.40mm Width)

STB18N55M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

550V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

192mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1260pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STL140N4F7AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

FET Feature

-

Power Dissipation (Max)

111W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

Recently Sold

ISL4221EIRZ-T

ISL4221EIRZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER FULL 1/1 16QFN

TLJT107M010R0900

TLJT107M010R0900

CAP TANT 100UF 20% 10V 1411

SMCJ36A-E3/57T

SMCJ36A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 36V 58.1V DO214AB

ABM8-166-114.285MHZ-T2

ABM8-166-114.285MHZ-T2

Abracon

CRYSTAL 114.2850MHZ 18PF SMD

IHLP1212BZER1R5M11

IHLP1212BZER1R5M11

Vishay Dale

FIXED IND 1.5UH 3.8A 32 MOHM SMD

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

TL072ID

TL072ID

STMicroelectronics

IC OPAMP JFET 2 CIRCUIT 8SO

3224W-1-101E

3224W-1-101E

Bourns

TRIMMER 100 OHM 0.25W J LEAD TOP

CM453232-1R5KL

CM453232-1R5KL

Bourns

FIXED IND 1.5UH 410MA 600 MOHM

RB751S40

RB751S40

ON Semiconductor

DIODE SCHOTTKY 40V 30MA SOD523F

MT29F2G16ABBEAHC-AIT:E TR

MT29F2G16ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

BAT54C

BAT54C

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT23-3