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SIHJ240N60E-T1-GE3

SIHJ240N60E-T1-GE3

For Reference Only

Part Number SIHJ240N60E-T1-GE3
PNEDA Part # SIHJ240N60E-T1-GE3
Description MOSFET N-CHAN 600V PPAK SO-8L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHJ240N60E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHJ240N60E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHJ240N60E-T1-GE3, SIHJ240N60E-T1-GE3 Datasheet (Total Pages: 11, Size: 207.12 KB)
PDFSIHJ240N60E-T1-GE3 Datasheet Cover
SIHJ240N60E-T1-GE3 Datasheet Page 2 SIHJ240N60E-T1-GE3 Datasheet Page 3 SIHJ240N60E-T1-GE3 Datasheet Page 4 SIHJ240N60E-T1-GE3 Datasheet Page 5 SIHJ240N60E-T1-GE3 Datasheet Page 6 SIHJ240N60E-T1-GE3 Datasheet Page 7 SIHJ240N60E-T1-GE3 Datasheet Page 8 SIHJ240N60E-T1-GE3 Datasheet Page 9 SIHJ240N60E-T1-GE3 Datasheet Page 10 SIHJ240N60E-T1-GE3 Datasheet Page 11

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SIHJ240N60E-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs240mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds783pF @ 100V
FET Feature-
Power Dissipation (Max)89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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