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SIHW47N60EF-GE3

SIHW47N60EF-GE3

For Reference Only

Part Number SIHW47N60EF-GE3
PNEDA Part # SIHW47N60EF-GE3
Description MOSFET N-CH 600V 47A TO-247AD
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,204
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHW47N60EF-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHW47N60EF-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHW47N60EF-GE3, SIHW47N60EF-GE3 Datasheet (Total Pages: 7, Size: 157.01 KB)
PDFSIHW47N60EF-GE3 Datasheet Cover
SIHW47N60EF-GE3 Datasheet Page 2 SIHW47N60EF-GE3 Datasheet Page 3 SIHW47N60EF-GE3 Datasheet Page 4 SIHW47N60EF-GE3 Datasheet Page 5 SIHW47N60EF-GE3 Datasheet Page 6 SIHW47N60EF-GE3 Datasheet Page 7

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SIHW47N60EF-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs225nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4854pF @ 100V
FET Feature-
Power Dissipation (Max)379W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD
Package / CaseTO-247-3

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