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SISA72DN-T1-GE3

SISA72DN-T1-GE3

For Reference Only

Part Number SISA72DN-T1-GE3
PNEDA Part # SISA72DN-T1-GE3
Description MOSFET N-CH 40V 60A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,034
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISA72DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISA72DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISA72DN-T1-GE3, SISA72DN-T1-GE3 Datasheet (Total Pages: 13, Size: 640.81 KB)
PDFSISA72DN-T1-GE3 Datasheet Cover
SISA72DN-T1-GE3 Datasheet Page 2 SISA72DN-T1-GE3 Datasheet Page 3 SISA72DN-T1-GE3 Datasheet Page 4 SISA72DN-T1-GE3 Datasheet Page 5 SISA72DN-T1-GE3 Datasheet Page 6 SISA72DN-T1-GE3 Datasheet Page 7 SISA72DN-T1-GE3 Datasheet Page 8 SISA72DN-T1-GE3 Datasheet Page 9 SISA72DN-T1-GE3 Datasheet Page 10 SISA72DN-T1-GE3 Datasheet Page 11

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SISA72DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3240pF @ 20V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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