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SIZ328DT-T1-GE3

SIZ328DT-T1-GE3

For Reference Only

Part Number SIZ328DT-T1-GE3
PNEDA Part # SIZ328DT-T1-GE3
Description MOSFET DUAL N-CHAN 25V POWERPAIR
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 26,340
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIZ328DT-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIZ328DT-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIZ328DT-T1-GE3, SIZ328DT-T1-GE3 Datasheet (Total Pages: 14, Size: 385.14 KB)
PDFSIZ328DT-T1-GE3 Datasheet Cover
SIZ328DT-T1-GE3 Datasheet Page 2 SIZ328DT-T1-GE3 Datasheet Page 3 SIZ328DT-T1-GE3 Datasheet Page 4 SIZ328DT-T1-GE3 Datasheet Page 5 SIZ328DT-T1-GE3 Datasheet Page 6 SIZ328DT-T1-GE3 Datasheet Page 7 SIZ328DT-T1-GE3 Datasheet Page 8 SIZ328DT-T1-GE3 Datasheet Page 9 SIZ328DT-T1-GE3 Datasheet Page 10 SIZ328DT-T1-GE3 Datasheet Page 11

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SIZ328DT-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.9nC @ 10V, 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 10V, 600pF @ 10V
Power - Max2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)

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