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SQ2348ES-T1_GE3

SQ2348ES-T1_GE3

For Reference Only

Part Number SQ2348ES-T1_GE3
PNEDA Part # SQ2348ES-T1_GE3
Description MOSFET N-CH 30V 8A SOT-23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 137,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ2348ES-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ2348ES-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ2348ES-T1_GE3, SQ2348ES-T1_GE3 Datasheet (Total Pages: 11, Size: 260.53 KB)
PDFSQ2348ES-T1_GE3 Datasheet Cover
SQ2348ES-T1_GE3 Datasheet Page 2 SQ2348ES-T1_GE3 Datasheet Page 3 SQ2348ES-T1_GE3 Datasheet Page 4 SQ2348ES-T1_GE3 Datasheet Page 5 SQ2348ES-T1_GE3 Datasheet Page 6 SQ2348ES-T1_GE3 Datasheet Page 7 SQ2348ES-T1_GE3 Datasheet Page 8 SQ2348ES-T1_GE3 Datasheet Page 9 SQ2348ES-T1_GE3 Datasheet Page 10 SQ2348ES-T1_GE3 Datasheet Page 11

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SQ2348ES-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs24mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 15V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236
Package / CaseTO-236-3, SC-59, SOT-23-3

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