SQJ570EP-T1_GE3
For Reference Only
| Part Number | SQJ570EP-T1_GE3 |
| PNEDA Part # | SQJ570EP-T1_GE3 |
| Description | MOSFET N/P-CH 100V POWERPAK SO8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 4,662 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 3 - Jun 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SQJ570EP-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SQJ570EP-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQJ570EP-T1_GE3 Datasheet
- where to find SQJ570EP-T1_GE3
- Vishay Siliconix
- Vishay Siliconix SQJ570EP-T1_GE3
- SQJ570EP-T1_GE3 PDF Datasheet
- SQJ570EP-T1_GE3 Stock
- SQJ570EP-T1_GE3 Pinout
- Datasheet SQJ570EP-T1_GE3
- SQJ570EP-T1_GE3 Supplier
- Vishay Siliconix Distributor
- SQJ570EP-T1_GE3 Price
- SQJ570EP-T1_GE3 Distributor
SQJ570EP-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc), 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V, 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V, 600pF @ 25V |
| Power - Max | 27W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
The Products You May Be Interested In
|
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Rds On (Max) @ Id, Vgs 21mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2.7V @ 200µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 30V Power - Max 1.4W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9.5A, 6.9A Rds On (Max) @ Id, Vgs 17mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1495pF @ 6V Power - Max 2.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package PowerDI5060-8 |
Manufacturer Toshiba Semiconductor and Storage Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 800mA Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V Power - Max 500mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-666 |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 95mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 10V Power - Max 1W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-WDFN Exposed Pad Supplier Device Package 6-UDFN (2x2) |
