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SQJ962EP-T1-GE3

SQJ962EP-T1-GE3

For Reference Only

Part Number SQJ962EP-T1-GE3
PNEDA Part # SQJ962EP-T1-GE3
Description MOSFET 2N-CH 60V 8A 8SO
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,492
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ962EP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ962EP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ962EP-T1-GE3, SQJ962EP-T1-GE3 Datasheet (Total Pages: 7, Size: 118.54 KB)
PDFSQJ962EP-T1-GE3 Datasheet Cover
SQJ962EP-T1-GE3 Datasheet Page 2 SQJ962EP-T1-GE3 Datasheet Page 3 SQJ962EP-T1-GE3 Datasheet Page 4 SQJ962EP-T1-GE3 Datasheet Page 5 SQJ962EP-T1-GE3 Datasheet Page 6 SQJ962EP-T1-GE3 Datasheet Page 7

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SQJ962EP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs60mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 25V
Power - Max25W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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