Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJQ910EL-T1_GE3

SQJQ910EL-T1_GE3

For Reference Only

Part Number SQJQ910EL-T1_GE3
PNEDA Part # SQJQ910EL-T1_GE3
Description MOSFET 2 N-CH 100V POWERPAK8X8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJQ910EL-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJQ910EL-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJQ910EL-T1_GE3, SQJQ910EL-T1_GE3 Datasheet (Total Pages: 7, Size: 246.72 KB)
PDFSQJQ910EL-T1_GE3 Datasheet Cover
SQJQ910EL-T1_GE3 Datasheet Page 2 SQJQ910EL-T1_GE3 Datasheet Page 3 SQJQ910EL-T1_GE3 Datasheet Page 4 SQJQ910EL-T1_GE3 Datasheet Page 5 SQJQ910EL-T1_GE3 Datasheet Page 6 SQJQ910EL-T1_GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQJQ910EL-T1_GE3 Datasheet
  • where to find SQJQ910EL-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQJQ910EL-T1_GE3
  • SQJQ910EL-T1_GE3 PDF Datasheet
  • SQJQ910EL-T1_GE3 Stock

  • SQJQ910EL-T1_GE3 Pinout
  • Datasheet SQJQ910EL-T1_GE3
  • SQJQ910EL-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQJQ910EL-T1_GE3 Price
  • SQJQ910EL-T1_GE3 Distributor

SQJQ910EL-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2832pF @ 50V
Power - Max187W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 8 x 8 Dual
Supplier Device PackagePowerPAK® 8 x 8 Dual

The Products You May Be Interested In

TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A

Rds On (Max) @ Id, Vgs

49mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 10V

Power - Max

330mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

VS-8 (2.9x1.5)

CTLDM8120-M832DS BK

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

860mA (Ta)

Rds On (Max) @ Id, Vgs

150mOhm @ 950mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.56nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 16V

Power - Max

1.65W

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TDFN Exposed Pad

Supplier Device Package

TLM832DS

DMP1046UFDB-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.8A

Rds On (Max) @ Id, Vgs

61mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.9nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

915pF @ 6V

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UDFN Exposed Pad

Supplier Device Package

U-DFN2020-6 (Type B)

IRF7379TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.8A, 4.3A

Rds On (Max) @ Id, Vgs

45mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 25V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

ECH8649-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.5A

Rds On (Max) @ Id, Vgs

17mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 10V

Power - Max

1.5W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

8-ECH

Recently Sold

MT28FW02GBBA1HPC-0AAT

MT28FW02GBBA1HPC-0AAT

Micron Technology Inc.

IC FLASH 2G PARALLEL 64LBGA

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

CM2009-00QR

CM2009-00QR

ON Semiconductor

VGA PORT COMPANION-65 OHM QSOP16

C1210C106M6PACTU

C1210C106M6PACTU

KEMET

CAP CER 10UF 35V X5R 1210

RRH050P03TB1

RRH050P03TB1

Rohm Semiconductor

MOSFET P-CH 30V 5A SOP8

4608X-101-153LF

4608X-101-153LF

Bourns

RES ARRAY 7 RES 15K OHM 8SIP

IXFK44N80P

IXFK44N80P

IXYS

MOSFET N-CH 800V 44A TO-264

MLX92251LSE-AAA-000-RE

MLX92251LSE-AAA-000-RE

Melexis Technologies NV

MAGNET SWITCH LATCH DUAL TSOT23

VNQ600

VNQ600

STMicroelectronics

RELAY SSR 4-CH HI-SIDE 28-SOIC

MBT3906DW1T1G

MBT3906DW1T1G

ON Semiconductor

TRANS 2PNP 40V 0.2A SC88

24LC32A-I/ST

24LC32A-I/ST

Microchip Technology

IC EEPROM 32K I2C 400KHZ 8TSSOP

MURS160T3G

MURS160T3G

ON Semiconductor

DIODE GEN PURP 600V 2A SMB