Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSM6J414TU,LF

SSM6J414TU,LF

For Reference Only

Part Number SSM6J414TU,LF
PNEDA Part # SSM6J414TU-LF
Description MOSFET P CH 20V 6A UF6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,182
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM6J414TU Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM6J414TU,LF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSM6J414TU,LF Datasheet
  • where to find SSM6J414TU,LF
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage SSM6J414TU,LF
  • SSM6J414TU,LF PDF Datasheet
  • SSM6J414TU,LF Stock

  • SSM6J414TU,LF Pinout
  • Datasheet SSM6J414TU,LF
  • SSM6J414TU,LF Supplier

  • Toshiba Semiconductor and Storage Distributor
  • SSM6J414TU,LF Price
  • SSM6J414TU,LF Distributor

SSM6J414TU Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVI
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs22.5mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs23.1nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1650pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUF6
Package / Case6-SMD, Flat Leads

The Products You May Be Interested In

FCP25N60N-F102

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SupreMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3352pF @ 100V

FET Feature

-

Power Dissipation (Max)

216W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRLR3705ZTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SI5473DC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

27mOhm @ 5.9A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

STI30NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRL1004

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 78A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5330pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

LM393DT

LM393DT

Rohm Semiconductor

IC COMPARATOR DUAL 0.4MA 8-SOIC

MC14040BDR2G

MC14040BDR2G

ON Semiconductor

IC COUNTER 12BIT CMOS 16SOIC

PS2501L-4-A

PS2501L-4-A

CEL

OPTOISOLTR 5KV 4CH TRANS 16-SMD

PDTC143ZT,235

PDTC143ZT,235

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

V7-7B17D8-201

V7-7B17D8-201

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 11A 125V

3314J-1-103E

3314J-1-103E

Bourns

TRIMMER 10K OHM 0.25W J LEAD TOP

W25Q80DVSVIG

W25Q80DVSVIG

Winbond Electronics

IC FLASH 8M SPI 104MHZ 8VSOP

HX1198FNL

HX1198FNL

Pulse Electronics Network

PULSE XFMR 1CT:1CT TX 1CT:1CT RX

FXLP34P5X

FXLP34P5X

ON Semiconductor

IC TRNSLTR UNIDIRECTIONAL SC70-5

B520C-13-F

B520C-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 5A SMC

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

SSC54-E3/57T

SSC54-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB