Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB120NF10T4

STB120NF10T4

For Reference Only

Part Number STB120NF10T4
PNEDA Part # STB120NF10T4
Description MOSFET N-CH 100V 110A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 331,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB120NF10T4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB120NF10T4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB120NF10T4, STB120NF10T4 Datasheet (Total Pages: 19, Size: 1,031.1 KB)
PDFSTF120NF10 Datasheet Cover
STF120NF10 Datasheet Page 2 STF120NF10 Datasheet Page 3 STF120NF10 Datasheet Page 4 STF120NF10 Datasheet Page 5 STF120NF10 Datasheet Page 6 STF120NF10 Datasheet Page 7 STF120NF10 Datasheet Page 8 STF120NF10 Datasheet Page 9 STF120NF10 Datasheet Page 10 STF120NF10 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB120NF10T4 Datasheet
  • where to find STB120NF10T4
  • STMicroelectronics

  • STMicroelectronics STB120NF10T4
  • STB120NF10T4 PDF Datasheet
  • STB120NF10T4 Stock

  • STB120NF10T4 Pinout
  • Datasheet STB120NF10T4
  • STB120NF10T4 Supplier

  • STMicroelectronics Distributor
  • STB120NF10T4 Price
  • STB120NF10T4 Distributor

STB120NF10T4 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs233nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 25V
FET Feature-
Power Dissipation (Max)312W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SQJQ404E-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.72mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

16480pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 8 x 8

Package / Case

8-PowerTDFN

HUFA76633S3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

39A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1820pF @ 25V

FET Feature

-

Power Dissipation (Max)

145W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFR020

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

640pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF830ALPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SPI10N10L

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

154mOhm @ 8.1A, 10V

Vgs(th) (Max) @ Id

2V @ 21µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

444pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

MADL-011021-14150T

MADL-011021-14150T

M/A-Com Technology Solutions

RF DIODE PIN 6TDFN

74FCT3807SOGI

74FCT3807SOGI

IDT, Integrated Device Technology

IC CLK BUFFER 1:10 100MHZ 20SOIC

11R472C

11R472C

Murata Power Solutions

FIXED IND 4.7UH 1.3A 90 MOHM TH

3224W-1-105E

3224W-1-105E

Bourns

TRIMMER 1M OHM 0.25W J LEAD TOP

MB95F698KPMC-G-SNE2

MB95F698KPMC-G-SNE2

Cypress Semiconductor

IC MCU 8BIT 60KB FLASH 48LQFP

DS1216C

DS1216C

Maxim Integrated

IC SMART/RAM 5V 64K/256K 28-DIP

2920L050DR

2920L050DR

Littelfuse

PTC RESET FUSE 60V 500MA 2920

74VHC125TTR

74VHC125TTR

STMicroelectronics

IC BUF NON-INVERT 5.5V 14TSSOP

T520B227M006ATE070

T520B227M006ATE070

KEMET

CAP TANT POLY 220UF 6.3V 3528

MAX8902BATA+T

MAX8902BATA+T

Maxim Integrated

IC REG LIN POS ADJ 500MA 8TDFN

IRF630NPBF

IRF630NPBF

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-220AB

FQD3P50TM

FQD3P50TM

ON Semiconductor

MOSFET P-CH 500V 2.1A DPAK