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STB18N60M6

STB18N60M6

For Reference Only

Part Number STB18N60M6
PNEDA Part # STB18N60M6
Description N-CHANNEL 600 V, 105 MOHM TYP.,
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,880
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB18N60M6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB18N60M6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB18N60M6, STB18N60M6 Datasheet (Total Pages: 16, Size: 627.08 KB)
PDFSTB18N60M6 Datasheet Cover
STB18N60M6 Datasheet Page 2 STB18N60M6 Datasheet Page 3 STB18N60M6 Datasheet Page 4 STB18N60M6 Datasheet Page 5 STB18N60M6 Datasheet Page 6 STB18N60M6 Datasheet Page 7 STB18N60M6 Datasheet Page 8 STB18N60M6 Datasheet Page 9 STB18N60M6 Datasheet Page 10 STB18N60M6 Datasheet Page 11

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STB18N60M6 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.8nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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