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STGD4M65DF2

STGD4M65DF2

For Reference Only

Part Number STGD4M65DF2
PNEDA Part # STGD4M65DF2
Description TRENCH GATE FIELD-STOP IGBT, M S
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 46,530
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGD4M65DF2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGD4M65DF2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGD4M65DF2, STGD4M65DF2 Datasheet (Total Pages: 20, Size: 443.73 KB)
PDFSTGD4M65DF2 Datasheet Cover
STGD4M65DF2 Datasheet Page 2 STGD4M65DF2 Datasheet Page 3 STGD4M65DF2 Datasheet Page 4 STGD4M65DF2 Datasheet Page 5 STGD4M65DF2 Datasheet Page 6 STGD4M65DF2 Datasheet Page 7 STGD4M65DF2 Datasheet Page 8 STGD4M65DF2 Datasheet Page 9 STGD4M65DF2 Datasheet Page 10 STGD4M65DF2 Datasheet Page 11

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STGD4M65DF2 Specifications

ManufacturerSTMicroelectronics
SeriesM
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)8A
Current - Collector Pulsed (Icm)16A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A
Power - Max68W
Switching Energy40µJ (on), 136µJ (off)
Input TypeStandard
Gate Charge15.2nC
Td (on/off) @ 25°C12ns/86ns
Test Condition400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr)133ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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Test Condition

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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