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STGW30NC120HD

STGW30NC120HD

For Reference Only

Part Number STGW30NC120HD
PNEDA Part # STGW30NC120HD
Description IGBT 1200V 60A 220W TO247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 19,692
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGW30NC120HD Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGW30NC120HD
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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STGW30NC120HD Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.75V @ 15V, 20A
Power - Max220W
Switching Energy1.66mJ (on), 4.44mJ (off)
Input TypeStandard
Gate Charge110nC
Td (on/off) @ 25°C29ns/275ns
Test Condition960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)152ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

230W

Switching Energy

430µJ (on), 350µJ (off)

Input Type

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Gate Charge

30nC

Td (on/off) @ 25°C

19ns/80ns

Test Condition

400V, 20A, 20Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

19A

Current - Collector Pulsed (Icm)

38A

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Power - Max

60W

Switching Energy

120µJ (on), 2.05mJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

27ns/540ns

Test Condition

480V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

18A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

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Switching Energy

430µJ (on), 350µJ (off)

Input Type

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Test Condition

400V, 20A, 20Ohm, 15V

Reverse Recovery Time (trr)

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-55°C ~ 175°C (TJ)

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TO-220-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

9A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

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Power - Max

49W

Switching Energy

50µJ (on), 27µJ (off)

Input Type

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Gate Charge

17nC

Td (on/off) @ 25°C

27ns/59ns

Test Condition

300V, 3A, 30Ohm, 15V

Reverse Recovery Time (trr)

65ns

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

110A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

30ns/150ns

Test Condition

480V, 30A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264AA(IXSK)

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