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STH250N55F3-6

STH250N55F3-6

For Reference Only

Part Number STH250N55F3-6
PNEDA Part # STH250N55F3-6
Description MOSFET N-CH 55V 180A H2PAK-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,256
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH250N55F3-6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH250N55F3-6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH250N55F3-6, STH250N55F3-6 Datasheet (Total Pages: 13, Size: 707.45 KB)
PDFSTH250N55F3-6 Datasheet Cover
STH250N55F3-6 Datasheet Page 2 STH250N55F3-6 Datasheet Page 3 STH250N55F3-6 Datasheet Page 4 STH250N55F3-6 Datasheet Page 5 STH250N55F3-6 Datasheet Page 6 STH250N55F3-6 Datasheet Page 7 STH250N55F3-6 Datasheet Page 8 STH250N55F3-6 Datasheet Page 9 STH250N55F3-6 Datasheet Page 10 STH250N55F3-6 Datasheet Page 11

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STH250N55F3-6 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH²PAK
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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