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STL8N10F7

STL8N10F7

For Reference Only

Part Number STL8N10F7
PNEDA Part # STL8N10F7
Description MOSFET N-CH 100V 8A 8POWERFLAT
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STL8N10F7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTL8N10F7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STL8N10F7, STL8N10F7 Datasheet (Total Pages: 14, Size: 645.36 KB)
PDFSTL8N10F7 Datasheet Cover
STL8N10F7 Datasheet Page 2 STL8N10F7 Datasheet Page 3 STL8N10F7 Datasheet Page 4 STL8N10F7 Datasheet Page 5 STL8N10F7 Datasheet Page 6 STL8N10F7 Datasheet Page 7 STL8N10F7 Datasheet Page 8 STL8N10F7 Datasheet Page 9 STL8N10F7 Datasheet Page 10 STL8N10F7 Datasheet Page 11

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STL8N10F7 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 50V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (3.3x3.3)
Package / Case8-PowerVDFN

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