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STP11N60DM2

STP11N60DM2

For Reference Only

Part Number STP11N60DM2
PNEDA Part # STP11N60DM2
Description N-CHANNEL 600 V, 0.26 OHM TYP.,
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 12,894
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP11N60DM2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP11N60DM2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP11N60DM2, STP11N60DM2 Datasheet (Total Pages: 12, Size: 710.63 KB)
PDFSTP11N60DM2 Datasheet Cover
STP11N60DM2 Datasheet Page 2 STP11N60DM2 Datasheet Page 3 STP11N60DM2 Datasheet Page 4 STP11N60DM2 Datasheet Page 5 STP11N60DM2 Datasheet Page 6 STP11N60DM2 Datasheet Page 7 STP11N60DM2 Datasheet Page 8 STP11N60DM2 Datasheet Page 9 STP11N60DM2 Datasheet Page 10 STP11N60DM2 Datasheet Page 11

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STP11N60DM2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds614pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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