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STP160N4LF6

STP160N4LF6

For Reference Only

Part Number STP160N4LF6
PNEDA Part # STP160N4LF6
Description MOSFET N-CH 40V 120A TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP160N4LF6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP160N4LF6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP160N4LF6, STP160N4LF6 Datasheet (Total Pages: 14, Size: 813.22 KB)
PDFSTP160N4LF6 Datasheet Cover
STP160N4LF6 Datasheet Page 2 STP160N4LF6 Datasheet Page 3 STP160N4LF6 Datasheet Page 4 STP160N4LF6 Datasheet Page 5 STP160N4LF6 Datasheet Page 6 STP160N4LF6 Datasheet Page 7 STP160N4LF6 Datasheet Page 8 STP160N4LF6 Datasheet Page 9 STP160N4LF6 Datasheet Page 10 STP160N4LF6 Datasheet Page 11

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STP160N4LF6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs181nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8130pF @ 20V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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