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STP315N10F7

STP315N10F7

For Reference Only

Part Number STP315N10F7
PNEDA Part # STP315N10F7
Description MOSFET N-CH 100V 180A TO-220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,476
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP315N10F7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP315N10F7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP315N10F7, STP315N10F7 Datasheet (Total Pages: 13, Size: 559.79 KB)
PDFSTP315N10F7 Datasheet Cover
STP315N10F7 Datasheet Page 2 STP315N10F7 Datasheet Page 3 STP315N10F7 Datasheet Page 4 STP315N10F7 Datasheet Page 5 STP315N10F7 Datasheet Page 6 STP315N10F7 Datasheet Page 7 STP315N10F7 Datasheet Page 8 STP315N10F7 Datasheet Page 9 STP315N10F7 Datasheet Page 10 STP315N10F7 Datasheet Page 11

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STP315N10F7 Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12800pF @ 25V
FET Feature-
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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