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STS10P4LLF6

STS10P4LLF6

For Reference Only

Part Number STS10P4LLF6
PNEDA Part # STS10P4LLF6
Description MOSFET P-CH 40V 10A 8SOIC
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STS10P4LLF6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTS10P4LLF6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STS10P4LLF6, STS10P4LLF6 Datasheet (Total Pages: 14, Size: 734.27 KB)
PDFSTS10P4LLF6 Datasheet Cover
STS10P4LLF6 Datasheet Page 2 STS10P4LLF6 Datasheet Page 3 STS10P4LLF6 Datasheet Page 4 STS10P4LLF6 Datasheet Page 5 STS10P4LLF6 Datasheet Page 6 STS10P4LLF6 Datasheet Page 7 STS10P4LLF6 Datasheet Page 8 STS10P4LLF6 Datasheet Page 9 STS10P4LLF6 Datasheet Page 10 STS10P4LLF6 Datasheet Page 11

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STS10P4LLF6 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ F6
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 3A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs34nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3525pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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