Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW18N60DM2

STW18N60DM2

For Reference Only

Part Number STW18N60DM2
PNEDA Part # STW18N60DM2
Description MOSFET N-CH 600V 12A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 18,936
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW18N60DM2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW18N60DM2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW18N60DM2, STW18N60DM2 Datasheet (Total Pages: 12, Size: 267.29 KB)
PDFSTW18N60DM2 Datasheet Cover
STW18N60DM2 Datasheet Page 2 STW18N60DM2 Datasheet Page 3 STW18N60DM2 Datasheet Page 4 STW18N60DM2 Datasheet Page 5 STW18N60DM2 Datasheet Page 6 STW18N60DM2 Datasheet Page 7 STW18N60DM2 Datasheet Page 8 STW18N60DM2 Datasheet Page 9 STW18N60DM2 Datasheet Page 10 STW18N60DM2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW18N60DM2 Datasheet
  • where to find STW18N60DM2
  • STMicroelectronics

  • STMicroelectronics STW18N60DM2
  • STW18N60DM2 PDF Datasheet
  • STW18N60DM2 Stock

  • STW18N60DM2 Pinout
  • Datasheet STW18N60DM2
  • STW18N60DM2 Supplier

  • STMicroelectronics Distributor
  • STW18N60DM2 Price
  • STW18N60DM2 Distributor

STW18N60DM2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 100V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

The Products You May Be Interested In

TP0606N3-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

320mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 750mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

IRFB3077GPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 50V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFH7188TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FASTIRFET™, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2116pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 132W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-PowerTDFN

IXFH35N30Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

6V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4075pF @ 25V

FET Feature

-

Power Dissipation (Max)

890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268HV (IXFT)

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Recently Sold

ADP1613ARMZ-R7

ADP1613ARMZ-R7

Analog Devices

IC REG BST SEPIC ADJ 2A 8MSOP

MSP5.0A-M3/89A

MSP5.0A-M3/89A

Vishay Semiconductor Diodes Division

TVS DIODE 5V 10.9V MICROSMP

4608X-102-103LF

4608X-102-103LF

Bourns

RES ARRAY 4 RES 10K OHM 8SIP

PI5USB2544ZHEX

PI5USB2544ZHEX

Diodes Incorporated

IC USB CNTRL DETECT SWTCH 16TQFN

CAT28C64BLI90

CAT28C64BLI90

ON Semiconductor

IC EEPROM 64K PARALLEL 28DIP

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

10MQ060NTR

10MQ060NTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2.1A SMA

MTC1S2403MC-R13

MTC1S2403MC-R13

Murata Power Solutions

DC DC CONVERTER 3.3V 1W

MAX3232CSE+T

MAX3232CSE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

XC18V04PCG44C

XC18V04PCG44C

Xilinx

IC PROM REPROGR 4MB 44-PLCC

SP6205EM5-L-3-0

SP6205EM5-L-3-0

MaxLinear, Inc.

IC REG LINEAR 3V 500MA SOT23-5

DS18S20+T&R

DS18S20+T&R

Maxim Integrated

SENSOR DIGITAL -55C-125C TO92-3