Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW55NM60ND

STW55NM60ND

For Reference Only

Part Number STW55NM60ND
PNEDA Part # STW55NM60ND
Description MOSFET N-CH 600V 51A TO-247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 9,420
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW55NM60ND Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW55NM60ND
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW55NM60ND Datasheet
  • where to find STW55NM60ND
  • STMicroelectronics

  • STMicroelectronics STW55NM60ND
  • STW55NM60ND PDF Datasheet
  • STW55NM60ND Stock

  • STW55NM60ND Pinout
  • Datasheet STW55NM60ND
  • STW55NM60ND Supplier

  • STMicroelectronics Distributor
  • STW55NM60ND Price
  • STW55NM60ND Distributor

STW55NM60ND Specifications

ManufacturerSTMicroelectronics
SeriesFDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds5800pF @ 50V
FET Feature-
Power Dissipation (Max)350W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

The Products You May Be Interested In

FQD10N20TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 51W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7526D1TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 25V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro8™

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IXFH30N50

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5700pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

TK35N65W5,S1F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

95mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 2.1mA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 300V

FET Feature

-

Power Dissipation (Max)

270W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

IRF6810STRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.1V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1038pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 20W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET S1

Package / Case

DirectFET™ Isometric S1

Recently Sold

V23050-A1110-A533

V23050-A1110-A533

TE Connectivity Potter & Brumfield Relays

RELAY SAFETY 6PST 8A 110V

PIC17C756A-33/L

PIC17C756A-33/L

Microchip Technology

IC MCU 8BIT 32KB OTP 68PLCC

PS2801C-4-A

PS2801C-4-A

CEL

OPTOISO 2.5KV 4CH TRANS 16SSOP

WSL120600000ZEA9

WSL120600000ZEA9

Vishay Dale

RES 0 OHM JUMPER 1206

ADP1708ACPZ-R7

ADP1708ACPZ-R7

Analog Devices

IC REG LINEAR POS ADJ 1A 8LFCSP

BK/HTB-42I-R

BK/HTB-42I-R

Eaton - Electronics Division

FUSE HLDR CART 250V 20A PNL MNT

ALS70A273NT250

ALS70A273NT250

KEMET

CAP ALUM 27000UF 20% 250V SCREW

BAS16

BAS16

Panasonic Electronic Components

DIODE GEN PURP 80V 200MA SC59-3

LTST-C191KRKT

LTST-C191KRKT

Lite-On Inc.

LED RED CLEAR SMD

XC3S500E-4VQG100I

XC3S500E-4VQG100I

Xilinx

IC FPGA 66 I/O 100VQFP

SMLP34RGB2W3

SMLP34RGB2W3

Rohm Semiconductor

LED RGB DIFFUSED PICOLED SMD

83023AMILF

83023AMILF

IDT, Integrated Device Technology

IC TRNSLTR UNIDIRECTIONAL 8SOIC