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SUP90N04-3M3P-GE3

SUP90N04-3M3P-GE3

For Reference Only

Part Number SUP90N04-3M3P-GE3
PNEDA Part # SUP90N04-3M3P-GE3
Description MOSFET N-CH 40V 90A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP90N04-3M3P-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP90N04-3M3P-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP90N04-3M3P-GE3, SUP90N04-3M3P-GE3 Datasheet (Total Pages: 7, Size: 131.96 KB)
PDFSUP90N04-3M3P-GE3 Datasheet Cover
SUP90N04-3M3P-GE3 Datasheet Page 2 SUP90N04-3M3P-GE3 Datasheet Page 3 SUP90N04-3M3P-GE3 Datasheet Page 4 SUP90N04-3M3P-GE3 Datasheet Page 5 SUP90N04-3M3P-GE3 Datasheet Page 6 SUP90N04-3M3P-GE3 Datasheet Page 7

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SUP90N04-3M3P-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs131nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5286pF @ 20V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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