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TK12A60U(Q,M)

TK12A60U(Q,M)

For Reference Only

Part Number TK12A60U(Q,M)
PNEDA Part # TK12A60U-Q-M
Description MOSFET N-CH 600V 12A TO220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK12A60U(Q Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK12A60U(Q,M)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK12A60U(Q Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds720pF @ 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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