Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TN0104N8-G

TN0104N8-G

For Reference Only

Part Number TN0104N8-G
PNEDA Part # TN0104N8-G
Description MOSFET N-CH 40V 0.63A TO243AA
Manufacturer Microchip Technology
Unit Price Request a Quote
In Stock 3,078
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TN0104N8-G Resources

Brand Microchip Technology
ECAD Module ECAD
Mfr. Part NumberTN0104N8-G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TN0104N8-G Datasheet
  • where to find TN0104N8-G
  • Microchip Technology

  • Microchip Technology TN0104N8-G
  • TN0104N8-G PDF Datasheet
  • TN0104N8-G Stock

  • TN0104N8-G Pinout
  • Datasheet TN0104N8-G
  • TN0104N8-G Supplier

  • Microchip Technology Distributor
  • TN0104N8-G Price
  • TN0104N8-G Distributor

TN0104N8-G Specifications

ManufacturerMicrochip Technology
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C630mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Rds On (Max) @ Id, Vgs2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id1.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 20V
FET Feature-
Power Dissipation (Max)1.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-243AA (SOT-89)
Package / CaseTO-243AA

The Products You May Be Interested In

SI1079X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.44A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 1.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 15V

FET Feature

-

Power Dissipation (Max)

330mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

DMT2004UFDF-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

14.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

1.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53.7nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1683pF @ 15V

FET Feature

-

Power Dissipation (Max)

800mW (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad

PHT6NQ10T,135

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

633pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 8.3W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-73

Package / Case

TO-261-4, TO-261AA

STW33N60M6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

IRFS4615TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

42mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1750pF @ 50V

FET Feature

-

Power Dissipation (Max)

144W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

0217002.MXP

0217002.MXP

Littelfuse

FUSE GLASS 2A 250VAC 5X20MM

FC-12M 32.7680KA-A5

FC-12M 32.7680KA-A5

EPSON

CRYSTAL 32.768KHZ 12.5PF SMD

FDS6675

FDS6675

ON Semiconductor

MOSFET P-CH 30V 11A 8-SOIC

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

LPC3250FET296/01,5

LPC3250FET296/01,5

NXP

IC MCU 16/32BIT ROMLESS 296TFBGA

MT41K256M16HA-125 IT:E

MT41K256M16HA-125 IT:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

T495X107K025ATE150

T495X107K025ATE150

KEMET

CAP TANT 100UF 10% 25V 2917

IRF8313TRPBF

IRF8313TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 9.7A 8-SOIC

STM32F777BIT6

STM32F777BIT6

STMicroelectronics

IC MCU 32BIT 2MB FLASH 208LQFP

CP2105-F01-GM

CP2105-F01-GM

Silicon Labs

IC SGL USB-DL UART BRIDGE 24QFN

PIC12F609-I/SN

PIC12F609-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

KSZ8863MLLI

KSZ8863MLLI

Microchip Technology

IC ETHERNET SWITCH 3PORT 48-LQFP