TPC8110(TE12L,Q,M)
For Reference Only
| Part Number | TPC8110(TE12L,Q,M) |
| PNEDA Part # | TPC8110-TE12L-Q-M |
| Description | MOSFET P-CH 40V 8A SOP8 2-6J1B |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 6,354 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TPC8110(TE12L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | TPC8110(TE12L,Q,M) |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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TPC8110(TE12L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
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