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TPC8212-H(TE12LQ,M

TPC8212-H(TE12LQ,M

For Reference Only

Part Number TPC8212-H(TE12LQ,M
PNEDA Part # TPC8212-H-TE12LQ-M
Description MOSFET 2N-CH 30V 6A SOP8
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,382
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPC8212-H(TE12LQ Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPC8212-H(TE12LQ,M
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
TPC8212-H(TE12LQ, TPC8212-H(TE12LQ Datasheet (Total Pages: 7, Size: 218.43 KB)
PDFTPC8212-H(TE12LQ Datasheet Cover
TPC8212-H(TE12LQ Datasheet Page 2 TPC8212-H(TE12LQ Datasheet Page 3 TPC8212-H(TE12LQ Datasheet Page 4 TPC8212-H(TE12LQ Datasheet Page 5 TPC8212-H(TE12LQ Datasheet Page 6 TPC8212-H(TE12LQ Datasheet Page 7

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TPC8212-H(TE12LQ Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs21mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds840pF @ 10V
Power - Max450mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)

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