Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TPCA8103(TE12L,Q,M

TPCA8103(TE12L,Q,M

For Reference Only

Part Number TPCA8103(TE12L,Q,M
PNEDA Part # TPCA8103-TE12L-Q-M
Description MOSFET P-CH 30V 40A SOP-8 ADV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 10 - Jun 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCA8103(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCA8103(TE12L,Q,M
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCA8103(TE12L, TPCA8103(TE12L Datasheet (Total Pages: 7, Size: 248.99 KB)
PDFTPCA8103(TE12L Datasheet Cover
TPCA8103(TE12L Datasheet Page 2 TPCA8103(TE12L Datasheet Page 3 TPCA8103(TE12L Datasheet Page 4 TPCA8103(TE12L Datasheet Page 5 TPCA8103(TE12L Datasheet Page 6 TPCA8103(TE12L Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TPCA8103(TE12L,Q,M Datasheet
  • where to find TPCA8103(TE12L,Q,M
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TPCA8103(TE12L,Q,M
  • TPCA8103(TE12L,Q,M PDF Datasheet
  • TPCA8103(TE12L,Q,M Stock

  • TPCA8103(TE12L,Q,M Pinout
  • Datasheet TPCA8103(TE12L,Q,M
  • TPCA8103(TE12L,Q,M Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TPCA8103(TE12L,Q,M Price
  • TPCA8103(TE12L,Q,M Distributor

TPCA8103(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs184nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7880pF @ 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

The Products You May Be Interested In

IRF6620TR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 27A, 10V

Vgs(th) (Max) @ Id

2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4130pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

FDME430NT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MicroFet 1.6x1.6 Thin

Package / Case

6-PowerUFDFN

AOW29S50

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1312pF @ 100V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

APT8024JLL

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4670pF @ 25V

FET Feature

-

Power Dissipation (Max)

460W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

FQP4N50

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

3.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7Ohm @ 1.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

NL453232T-3R3J-PF

NL453232T-3R3J-PF

TDK

FIXED IND 3.3UH 355MA 800 MOHM

PA0277NL

PA0277NL

Pulse Electronics Power

FIXED IND 700NH 10.7A 95 MOHM

SIR424DP-T1-GE3

SIR424DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 30A PPAK SO-8

MMSZ5250BT1G

MMSZ5250BT1G

ON Semiconductor

DIODE ZENER 20V 500MW SOD123

XC3S50A-4VQG100C

XC3S50A-4VQG100C

Xilinx

IC FPGA 68 I/O 100VQFP

S6010RTP

S6010RTP

Littelfuse

SCR SENS 600V 10A TO220

IRGP4750D-EPBF

IRGP4750D-EPBF

Infineon Technologies

IGBT 650V 70A 273W TO247AD

USB2512I-AEZG

USB2512I-AEZG

Microchip Technology

IC USB 2.0 2PORT HUB CTLR 36-QFN

MAX1686HEUA+T

MAX1686HEUA+T

Maxim Integrated

IC REG CHARG PUMP SIM 1OUT 8UMAX

BAT54

BAT54

ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOT23-3

CS240610

CS240610

Powerex Inc.

DIODE GP 600V 100A POWRBLOK

ADM811SARTZ-REEL7

ADM811SARTZ-REEL7

Analog Devices

IC SUPVSR W/RESET 2.93V SOT143-4