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TSM680P06CI C0G

TSM680P06CI C0G

For Reference Only

Part Number TSM680P06CI C0G
PNEDA Part # TSM680P06CI-C0G
Description MOSFET P-CHANNEL
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TSM680P06CI C0G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberTSM680P06CI C0G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TSM680P06CI C0G, TSM680P06CI C0G Datasheet (Total Pages: 10, Size: 671.22 KB)
PDFTSM680P06CZ C0G Datasheet Cover
TSM680P06CZ C0G Datasheet Page 2 TSM680P06CZ C0G Datasheet Page 3 TSM680P06CZ C0G Datasheet Page 4 TSM680P06CZ C0G Datasheet Page 5 TSM680P06CZ C0G Datasheet Page 6 TSM680P06CZ C0G Datasheet Page 7 TSM680P06CZ C0G Datasheet Page 8 TSM680P06CZ C0G Datasheet Page 9 TSM680P06CZ C0G Datasheet Page 10

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TSM680P06CI C0G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs68mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 30V
FET Feature-
Power Dissipation (Max)17W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220
Package / CaseTO-220-3 Full Pack, Isolated Tab

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