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UG06DHA1G

UG06DHA1G

For Reference Only

Part Number UG06DHA1G
PNEDA Part # UG06DHA1G
Description DIODE GEN PURP 200V 600MA TS-1
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 5,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UG06DHA1G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberUG06DHA1G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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UG06DHA1G Specifications

ManufacturerTaiwan Semiconductor Corporation
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)600mA
Voltage - Forward (Vf) (Max) @ If950mV @ 600mA
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)15ns
Current - Reverse Leakage @ Vr5µA @ 200V
Capacitance @ Vr, F9pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseT-18, Axial
Supplier Device PackageTS-1
Operating Temperature - Junction-55°C ~ 150°C

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Current - Average Rectified (Io)

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Current - Average Rectified (Io)

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Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Surface Mount

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