Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

VN2222LL-G

VN2222LL-G

For Reference Only

Part Number VN2222LL-G
PNEDA Part # VN2222LL-G
Description MOSFET N-CH 60V 0.23A TO92-3
Manufacturer Microchip Technology
Unit Price Request a Quote
In Stock 19,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VN2222LL-G Resources

Brand Microchip Technology
ECAD Module ECAD
Mfr. Part NumberVN2222LL-G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • VN2222LL-G Datasheet
  • where to find VN2222LL-G
  • Microchip Technology

  • Microchip Technology VN2222LL-G
  • VN2222LL-G PDF Datasheet
  • VN2222LL-G Stock

  • VN2222LL-G Pinout
  • Datasheet VN2222LL-G
  • VN2222LL-G Supplier

  • Microchip Technology Distributor
  • VN2222LL-G Price
  • VN2222LL-G Distributor

VN2222LL-G Specifications

ManufacturerMicrochip Technology
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
FET Feature-
Power Dissipation (Max)400mW (Ta), 1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

The Products You May Be Interested In

EKI10126

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.6mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

88.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6420pF @ 25V

FET Feature

-

Power Dissipation (Max)

135W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

STI15NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

299mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STF30NM50N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

115mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

94nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2740pF @ 50V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

DMN6017SK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2711pF @ 15V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STQ1NK60ZR-AP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

300mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15Ohm @ 400mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

94pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Recently Sold

JS28F128J3F75A

JS28F128J3F75A

Micron Technology Inc.

IC FLASH 128M PARALLEL 56TSOP

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

2920L050DR

2920L050DR

Littelfuse

PTC RESET FUSE 60V 500MA 2920

AD820ARZ

AD820ARZ

Analog Devices

IC OPAMP JFET 1 CIRCUIT 8SOIC

DS1216C

DS1216C

Maxim Integrated

IC SMART/RAM 5V 64K/256K 28-DIP

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

IS25CQ032-JBLE

IS25CQ032-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 8SOIC

NCP2820FCT1G

NCP2820FCT1G

ON Semiconductor

IC AMP AUDIO D 2.65W 9-FLIPCHIP

IRF630NPBF

IRF630NPBF

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-220AB

BCP53-16T1G

BCP53-16T1G

ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

PBSS5250X,115

PBSS5250X,115

Nexperia

TRANS PNP 50V 2A SOT89

XC2C256-7VQG100I

XC2C256-7VQG100I

Xilinx

IC CPLD 256MC 6.7NS 100VQFP