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VS-4EWH02FN-M3

VS-4EWH02FN-M3

For Reference Only

Part Number VS-4EWH02FN-M3
PNEDA Part # VS-4EWH02FN-M3
Description DIODE GEN PURP 200V 4A DPAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 24,954
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-4EWH02FN-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-4EWH02FN-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-4EWH02FN-M3, VS-4EWH02FN-M3 Datasheet (Total Pages: 8, Size: 162.03 KB)
PDFVS-4EWH02FNTRR-M3 Datasheet Cover
VS-4EWH02FNTRR-M3 Datasheet Page 2 VS-4EWH02FNTRR-M3 Datasheet Page 3 VS-4EWH02FNTRR-M3 Datasheet Page 4 VS-4EWH02FNTRR-M3 Datasheet Page 5 VS-4EWH02FNTRR-M3 Datasheet Page 6 VS-4EWH02FNTRR-M3 Datasheet Page 7 VS-4EWH02FNTRR-M3 Datasheet Page 8

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VS-4EWH02FN-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)4A
Voltage - Forward (Vf) (Max) @ If950mV @ 4A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)20ns
Current - Reverse Leakage @ Vr3µA @ 200V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-PAK (TO-252AA)
Operating Temperature - Junction-65°C ~ 175°C

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