Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZVN4206ASTOA

ZVN4206ASTOA

For Reference Only

Part Number ZVN4206ASTOA
PNEDA Part # ZVN4206ASTOA
Description MOSFET N-CH 60V 0.6A TO92-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 11 - Jun 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZVN4206ASTOA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZVN4206ASTOA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZVN4206ASTOA, ZVN4206ASTOA Datasheet (Total Pages: 3, Size: 103.3 KB)
PDFZVN4206ASTOB Datasheet Cover
ZVN4206ASTOB Datasheet Page 2 ZVN4206ASTOB Datasheet Page 3

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZVN4206ASTOA Datasheet
  • where to find ZVN4206ASTOA
  • Diodes Incorporated

  • Diodes Incorporated ZVN4206ASTOA
  • ZVN4206ASTOA PDF Datasheet
  • ZVN4206ASTOA Stock

  • ZVN4206ASTOA Pinout
  • Datasheet ZVN4206ASTOA
  • ZVN4206ASTOA Supplier

  • Diodes Incorporated Distributor
  • ZVN4206ASTOA Price
  • ZVN4206ASTOA Distributor

ZVN4206ASTOA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds100pF @ 25V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageE-Line (TO-92 compatible)
Package / CaseE-Line-3

The Products You May Be Interested In

WPB4002

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 220W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PB

Package / Case

TO-3P-3, SC-65-3

IRL530S

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

160mOhm @ 9A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

930pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

ATP613-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 2.75A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

13.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 30V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ATPAK

Package / Case

ATPAK (2 leads+tab)

IPB03N03LA

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7027pF @ 15V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TPCA8003-H(TE12LQM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1465pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

Recently Sold

JANTX1N6642U

JANTX1N6642U

Microsemi

DIODE GEN PURP 75V 300MA D5B

744842565

744842565

Wurth Electronics

COMMON MODE CHOKE 65UH 5A 2LN TH

SF-1206S400-2

SF-1206S400-2

Bourns

FUSE BOARD MOUNT 4A 32VDC 1206

AD9237BCPZ-40

AD9237BCPZ-40

Analog Devices

IC ADC 12BIT PIPELINED 32LFCSP

IRF7343TRPBF

IRF7343TRPBF

Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

XC7VX690T-1FFG1927I

XC7VX690T-1FFG1927I

Xilinx

IC FPGA 600 I/O 1927FCBGA

CD143A-SR70

CD143A-SR70

Bourns

TVS DIODE 7V SOT143

BA6219B

BA6219B

Rohm Semiconductor

IC MOTOR DRIVER 8V-18V 10HSIP

CXA-0359

CXA-0359

TDK

INVERTER DC/DC

MCIMX27LMOP4A

MCIMX27LMOP4A

NXP

IC MPU I.MX27 400MHZ 473MAPBGA

CY2304SXI-1

CY2304SXI-1

Cypress Semiconductor

IC CLK ZDB 4OUT 133MHZ 8SOIC