Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZVP4525E6TA

ZVP4525E6TA

For Reference Only

Part Number ZVP4525E6TA
PNEDA Part # ZVP4525E6TA
Description MOSFET P-CH 250V 0.197A SOT-23-6
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 110,586
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZVP4525E6TA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZVP4525E6TA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZVP4525E6TA, ZVP4525E6TA Datasheet (Total Pages: 7, Size: 312.68 KB)
PDFZVP4525E6TC Datasheet Cover
ZVP4525E6TC Datasheet Page 2 ZVP4525E6TC Datasheet Page 3 ZVP4525E6TC Datasheet Page 4 ZVP4525E6TC Datasheet Page 5 ZVP4525E6TC Datasheet Page 6 ZVP4525E6TC Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZVP4525E6TA Datasheet
  • where to find ZVP4525E6TA
  • Diodes Incorporated

  • Diodes Incorporated ZVP4525E6TA
  • ZVP4525E6TA PDF Datasheet
  • ZVP4525E6TA Stock

  • ZVP4525E6TA Pinout
  • Datasheet ZVP4525E6TA
  • ZVP4525E6TA Supplier

  • Diodes Incorporated Distributor
  • ZVP4525E6TA Price
  • ZVP4525E6TA Distributor

ZVP4525E6TA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C197mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)3.5V, 10V
Rds On (Max) @ Id, Vgs14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.45nC @ 10V
Vgs (Max)±40V
Input Capacitance (Ciss) (Max) @ Vds73pF @ 25V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package / CaseSOT-23-6

The Products You May Be Interested In

BSB053N03LP G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MG-WDSON-2, CanPAK M™

Package / Case

3-WDSON

IPP100N04S4H2AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 70µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7180pF @ 25V

FET Feature

-

Power Dissipation (Max)

115W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPD50P04P4L11ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 25V

FET Feature

-

Power Dissipation (Max)

58W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-313

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STB23NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 50V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUF76639S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 51A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

SISS27DN-T1-GE3

SISS27DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 50A PPAK 1212-8S

AT89C51ED2-SLSUM

AT89C51ED2-SLSUM

Microchip Technology

IC MCU 8BIT 64KB FLASH 44PLCC

MSP5.0A-M3/89A

MSP5.0A-M3/89A

Vishay Semiconductor Diodes Division

TVS DIODE 5V 10.9V MICROSMP

DLP11TB800UL2L

DLP11TB800UL2L

Murata

CMC 100MA 2LN 80 OHM SMD

MT25QL128ABA1EW9-0SIT

MT25QL128ABA1EW9-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

HLMP-2655

HLMP-2655

Broadcom

LED LT BAR 8.89X8.89MM SGL HER

LTM4644IY

LTM4644IY

Linear Technology/Analog Devices

DC DC CONVERTER 4X0.6-5.5V

W25Q64JVSFIQ

W25Q64JVSFIQ

Winbond Electronics

IC FLASH 64M SPI 133MHZ 16SOIC

HUF75344P3

HUF75344P3

ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

SMAJ30CA

SMAJ30CA

Bourns

TVS DIODE 30V 48.4V SMA

DEA202450BT-1294C1-H

DEA202450BT-1294C1-H

TDK

FILTER BANDPASS WLAN&BLUETOOTH

AS5145B-HSSM

AS5145B-HSSM

ams

ROTARY ENCODER MAGNETIC 1024PPR