Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXMN3A14FTA

ZXMN3A14FTA

For Reference Only

Part Number ZXMN3A14FTA
PNEDA Part # ZXMN3A14FTA
Description MOSFET N-CH 30V 3.2A SOT23-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 51,102
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMN3A14FTA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMN3A14FTA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZXMN3A14FTA, ZXMN3A14FTA Datasheet (Total Pages: 8, Size: 274.64 KB)
PDFZXMN3A14FTA Datasheet Cover
ZXMN3A14FTA Datasheet Page 2 ZXMN3A14FTA Datasheet Page 3 ZXMN3A14FTA Datasheet Page 4 ZXMN3A14FTA Datasheet Page 5 ZXMN3A14FTA Datasheet Page 6 ZXMN3A14FTA Datasheet Page 7 ZXMN3A14FTA Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZXMN3A14FTA Datasheet
  • where to find ZXMN3A14FTA
  • Diodes Incorporated

  • Diodes Incorporated ZXMN3A14FTA
  • ZXMN3A14FTA PDF Datasheet
  • ZXMN3A14FTA Stock

  • ZXMN3A14FTA Pinout
  • Datasheet ZXMN3A14FTA
  • ZXMN3A14FTA Supplier

  • Diodes Incorporated Distributor
  • ZXMN3A14FTA Price
  • ZXMN3A14FTA Distributor

ZXMN3A14FTA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs65mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds448pF @ 15V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

PMV65UNEAR

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

73mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

291pF @ 10V

FET Feature

-

Power Dissipation (Max)

940mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

SCH1337-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

150mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

172pF @ 10V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-563/SCH6

Package / Case

SOT-563, SOT-666

STQ1HN60K3-AP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

400mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 600mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 50V

FET Feature

-

Power Dissipation (Max)

3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4352pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NP90N03VLG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7500pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 105W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

AD780ARZ

AD780ARZ

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC

NTR4502PT1G

NTR4502PT1G

ON Semiconductor

MOSFET P-CH 30V 1.13A SOT-23

LT3480EDD#TRPBF

LT3480EDD#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 10DFN

ATMEGA128-16AU

ATMEGA128-16AU

Microchip Technology

IC MCU 8BIT 128KB FLASH 64TQFP

S29JL064J60TFI003

S29JL064J60TFI003

Cypress Semiconductor

IC FLASH 64M PARALLEL 48TSOP

74LCX574MTCX

74LCX574MTCX

ON Semiconductor

IC FF D-TYPE SNGL 8BIT 20TSSOP

ESDA6V1L

ESDA6V1L

STMicroelectronics

TVS DIODE 5.25V SOT23-3

ESDR0502NMUTBG

ESDR0502NMUTBG

ON Semiconductor

TVS DIODE 5.5V 6UDFN

DS1216C

DS1216C

Maxim Integrated

IC SMART/RAM 5V 64K/256K 28-DIP

BZX84C3V3LT1G

BZX84C3V3LT1G

ON Semiconductor

DIODE ZENER 3.3V 225MW SOT23-3

PE-64934NL

PE-64934NL

Pulse Electronics Network

XFRMR T1/CEPT/ISDN-PRI 1:1

FQD3P50TM

FQD3P50TM

ON Semiconductor

MOSFET P-CH 500V 2.1A DPAK