Infineon supplies power semiconductors for Wheat Field Energy to help improve the efficiency of energy storage applications

     Infineon Technologies AG supplies power semiconductor devices to Maitian Energy, a fast-growing green energy industry leader and manufacturer of inverters and energy storage systems, to promote green energy development. Infineon will supply Wheat Field Energy with CoolSiCTM MOSFET 1200 V power semiconductor devices in conjunction with EiceDRIVER™ gate drivers for industrial energy storage applications. At the same time, Wheat Field Energy's cluster photovoltaic inverter will use Infineon's IGBT7 H7 1200 V power semiconductor devices.

     The global optical storage system (PV-ES) market has witnessed rapid growth in recent years. The competition of optical storage market is accelerating, and the key to win is to improve the power density. How energy storage applications improve efficiency and power density has attracted much attention. Infineon's CoolSiCTM MOSFET 1200 V and IGBT7 H7 1200 V series power semiconductor devices incorporate the latest semiconductor technologies and design concepts tailored to industry applications.

     Mr. Dai Hui Yu, Senior Vice President, Industrial & Infrastructure Business, Greater China, Infineon Technologies, said: "As an industry leader in power semiconductors, we are proud to work closely with Wheat Energy. Infineon will continue to help optical storage applications achieve higher power densities and more reliable systems, thereby driving the decarbonization process."

     Zhu Jingcheng, Chairman of Maitian Energy, said: "Thanks to the support of Infineon's advanced devices, Maitian Energy's products have been significantly improved in terms of reliability and efficiency, which has been an important driving force for Maitian Energy's growth. Infineon's technical support and product quality not only enhance our competitiveness, but also expand our presence in the market. We are confident about the future and look forward to further strengthening our cooperation with Infineon to promote the development of the industry and create greater value for our customers."

     The superior performance of Infineon's CoolSiCTM MOSFET 1200 V, thanks to its high power density, reduces losses by 50% and provides approximately 2% additional energy without increasing the battery size, which is particularly beneficial for high-performance, lightweight and compact energy storage solutions. The full range of H3PRO 15kW~30kW energy storage models of Wheat Field Energy uses Infineon CoolSiCTM MOSFET 1200 V. Thanks to the excellent performance of Infineon products, H3PRO models achieve up to 98.1% efficiency and excellent electromagnetic compatibility. Maitian H3PRO models also rely on their excellent performance and reliability, and their sales in the global market have increased rapidly.

     Infineon's TRENCHSTOP IGBT7 H7 650V/1200V product family has the advantage of lower losses to help improve the overall efficiency and power density of inverters, especially in high-power converter projects, where high-current packaged discrete devices with current processing capacity of more than 100A can reduce the number of IGBTs in parallel. Alternative IGBT module solution to further improve system reliability and reduce costs; In addition, the high quality performance of the H7 series products, as well as stronger resistance to cosmic rays and other characteristics have become the industry benchmark.

     At present, Maitian Energy in the industrial and commercial field of the main model R Series 75~110kW, it is the use of IGBT7 H7 series discrete devices, redefined the overall design of 100kW model, the highest efficiency of 98.6%; Thanks to the high quality performance of the discrete package IGBT7 H7 series, technical problems such as flow sharing in the process of combining tubes are avoided, thus greatly improving the operational reliability.

     Every power device needs a driver - the right driver makes the design more efficient. Infineon's products offer more than 500 EiceDRIVER gate drivers with typical output currents from 0.1 A to 18 A. It also has comprehensive protection features including Fast Short Circuit protection (DESAT), active Miller clamp, through short circuit protection, fault reporting, shutdown, overcurrent protection for all power devices including CoolSiC and IGBT.