New integrated SiP gallium nitride devices

     Transphorm, Inc., a leading global supplier of gallium nitride (GaN) power semiconductors (NASDAQ: Weltrend Semiconductor Inc., a global leader in integrated circuits for USB PD controllers with adapters, announced the launch of two new system-level packaged gallium nitride devices (SIPs), which, along with the flagship Gallium nitride SiP from Weltrend Electronics launched last year, To form the first system-level packaged gallium nitride product family based on the Transphorm SuperGaN platform.

     The two new SiP device models, WT7162RHUG24B and WT7162RHUG24C, integrate a high frequency multimode (quasi-resonant/bottom switch) flyback PWM controller from Vitron Electronics and Transphorm's 150 milliohm and 480 milliohm SuperGaN FETs. As with the previous 240 milliohm device (WT7162RHUG24A), two new devices can be paired with a USB PD or programmable power adapter controller to provide a total adapter solution. It is worth noting that they also offer more innovative features, including UHV bottom tracking charging mode, adaptive OCP compensation and adaptive green mode control, enabling customers to design high-quality power products faster with fewer devices and the most streamlined design solutions.

     Wayne Lo, Vice President of Marketing at Valtran, said: "Last year, we launched our first SiP gallium nitride device, which was a significant milestone in Valtran's evolution. For the AC-DC power supply product market, SiP gallium nitride devices represent a new Go-To-Market Strategy. The new products announced today show that we will continue to provide a wider selection of devices for this application, supporting a wider range of product power levels. "Transphorm's gallium nitride devices are unique in that the Transphorm SuperGaN platform and total package solution provide easier-to-design, high-performance power supplies for devices ranging from 30-watt low-power USB-C PD power adapters to nearly 200-watt power chargers."

     End-product manufacturers are looking for ways to develop new adapters with lower material (BOM) costs while offering flexibility, fast charging, and higher power output. In addition, for many application scenarios, manufacturers also want to offer more versatile chargers with multiple ports and/or multiple connection types. And in all these solutions, the product shape has to be smaller and lighter.

     Key benefits of Transphorm's normally closed d-mode SuperGaN technology platform include best-in-class stability (+/-20V gate margin and 4V immunity), reliability (FIT failure rate <0.05), and 50% higher power density than silicon devices. Our streamlined SiP design leverages the advantages of these GaN devices as well as our own innovative technology to create a near-plug-and-play solution that speeds up design while reducing form factor size.

     According to Tushar Dhayagude, vice president of Global Sales and FAE at Transphorm, "SiP can be an important device option given the needs of adapter and charger manufacturers. It can not only meet the requirements of the system power conversion efficiency, but also the function integration, the device is easier to use, so that the product can be designed in the shortest time. The first device launched by Vitron Electronics validates the performance and flexibility of SuperGaN SiP. "With this new device launch, our two companies are deepening our commitment to delivering more choice to our customers."