CY62147EV30LL-45B2XI
For Reference Only
| Part Number | CY62147EV30LL-45B2XI |
| PNEDA Part # | CY62147EV30LL-45B2XI |
| Description | IC SRAM 4M PARALLEL 48VFBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,964 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 22 - Apr 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY62147EV30LL-45B2XI Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY62147EV30LL-45B2XI |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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CY62147EV30LL-45B2XI Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | MoBL® |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45ns |
| Voltage - Supply | 2.2V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-VFBGA |
| Supplier Device Package | 48-VFBGA (6x8) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, DDR IIP Memory Size 36Mb (2M x 18) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.71V ~ 1.89V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 165-LBGA Supplier Device Package 165-LFBGA (15x17) |
