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DMN2014LHAB-7

DMN2014LHAB-7

For Reference Only

Part Number DMN2014LHAB-7
PNEDA Part # DMN2014LHAB-7
Description MOSFET 2N-CH 20V 9A 6-UDFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 28,272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 26 - May 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN2014LHAB-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN2014LHAB-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
DMN2014LHAB-7, DMN2014LHAB-7 Datasheet (Total Pages: 6, Size: 443.5 KB)
PDFDMN2014LHAB-7 Datasheet Cover
DMN2014LHAB-7 Datasheet Page 2 DMN2014LHAB-7 Datasheet Page 3 DMN2014LHAB-7 Datasheet Page 4 DMN2014LHAB-7 Datasheet Page 5 DMN2014LHAB-7 Datasheet Page 6

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DMN2014LHAB-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C9A
Rds On (Max) @ Id, Vgs13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 10V
Power - Max800mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFDFN Exposed Pad
Supplier Device PackageU-DFN2030-6 (Type B)

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