Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN3008SFGQ-7

DMN3008SFGQ-7

For Reference Only

Part Number DMN3008SFGQ-7
PNEDA Part # DMN3008SFGQ-7
Description MOSFET NCH 30V 17.6A POWERDI
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,022
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN3008SFGQ-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN3008SFGQ-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN3008SFGQ-7, DMN3008SFGQ-7 Datasheet (Total Pages: 7, Size: 515.16 KB)
PDFDMN3008SFGQ-7 Datasheet Cover
DMN3008SFGQ-7 Datasheet Page 2 DMN3008SFGQ-7 Datasheet Page 3 DMN3008SFGQ-7 Datasheet Page 4 DMN3008SFGQ-7 Datasheet Page 5 DMN3008SFGQ-7 Datasheet Page 6 DMN3008SFGQ-7 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN3008SFGQ-7 Datasheet
  • where to find DMN3008SFGQ-7
  • Diodes Incorporated

  • Diodes Incorporated DMN3008SFGQ-7
  • DMN3008SFGQ-7 PDF Datasheet
  • DMN3008SFGQ-7 Stock

  • DMN3008SFGQ-7 Pinout
  • Datasheet DMN3008SFGQ-7
  • DMN3008SFGQ-7 Supplier

  • Diodes Incorporated Distributor
  • DMN3008SFGQ-7 Price
  • DMN3008SFGQ-7 Distributor

DMN3008SFGQ-7 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17.6A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3690pF @ 10V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

The Products You May Be Interested In

R6015ENX

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

910pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

IPSH5N03LA G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2653pF @ 15V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

STL18N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1240pF @ 100V

FET Feature

-

Power Dissipation (Max)

57W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

IPD60R600C6ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

20.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 100V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

BSC076N06NS3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-5

Package / Case

8-PowerTDFN

Recently Sold

BC817-40-7-F

BC817-40-7-F

Diodes Incorporated

TRANS NPN 45V 500MA SOT23-3

MMBT3904-7-F

MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3

W25Q64DWSSIG

W25Q64DWSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

CAT93C46VI-GT3

CAT93C46VI-GT3

ON Semiconductor

IC EEPROM 1K SPI 2MHZ 8SOIC

AD8556ARZ

AD8556ARZ

Analog Devices

IC OPAMP ZERO-DRIFT 1 CIRC 8SOIC

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812

TSV992IQ2T

TSV992IQ2T

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8DFN

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

EVQ-Q2K03W

EVQ-Q2K03W

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.02A 15V

AD623ANZ

AD623ANZ

Analog Devices

IC INST AMP 1 CIRCUIT 8DIP

TPSD227K006R0100

TPSD227K006R0100

CAP TANT 220UF 10% 6.3V 2917