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ZXMHN6A07T8TA

ZXMHN6A07T8TA

For Reference Only

Part Number ZXMHN6A07T8TA
PNEDA Part # ZXMHN6A07T8TA
Description MOSFET 4N-CH 60V 1.4A SM8
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMHN6A07T8TA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMHN6A07T8TA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
ZXMHN6A07T8TA, ZXMHN6A07T8TA Datasheet (Total Pages: 8, Size: 592.95 KB)
PDFZXMHN6A07T8TA Datasheet Cover
ZXMHN6A07T8TA Datasheet Page 2 ZXMHN6A07T8TA Datasheet Page 3 ZXMHN6A07T8TA Datasheet Page 4 ZXMHN6A07T8TA Datasheet Page 5 ZXMHN6A07T8TA Datasheet Page 6 ZXMHN6A07T8TA Datasheet Page 7 ZXMHN6A07T8TA Datasheet Page 8

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ZXMHN6A07T8TA Specifications

ManufacturerDiodes Incorporated
Series-
FET Type4 N-Channel (H-Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.4A
Rds On (Max) @ Id, Vgs300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds166pF @ 40V
Power - Max1.6W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-223-8
Supplier Device PackageSM8

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Input Capacitance (Ciss) (Max) @ Vds

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

22.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

1.3W

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-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

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Series

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

350nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

390W

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Mounting Type

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Supplier Device Package

SP6-P

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