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FDB0260N1007L

FDB0260N1007L

For Reference Only

Part Number FDB0260N1007L
PNEDA Part # FDB0260N1007L
Description MOSFET N-CH 100V 200A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,946
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 26 - May 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB0260N1007L Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB0260N1007L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB0260N1007L, FDB0260N1007L Datasheet (Total Pages: 8, Size: 404.63 KB)
PDFFDB0260N1007L Datasheet Cover
FDB0260N1007L Datasheet Page 2 FDB0260N1007L Datasheet Page 3 FDB0260N1007L Datasheet Page 4 FDB0260N1007L Datasheet Page 5 FDB0260N1007L Datasheet Page 6 FDB0260N1007L Datasheet Page 7 FDB0260N1007L Datasheet Page 8

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FDB0260N1007L Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs118nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8545pF @ 50V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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