Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDM3622

FDM3622

For Reference Only

Part Number FDM3622
PNEDA Part # FDM3622
Description MOSFET N-CH 100V 4.4A 8MLP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 99,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDM3622 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDM3622
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDM3622, FDM3622 Datasheet (Total Pages: 8, Size: 346.62 KB)
PDFFDM3622 Datasheet Cover
FDM3622 Datasheet Page 2 FDM3622 Datasheet Page 3 FDM3622 Datasheet Page 4 FDM3622 Datasheet Page 5 FDM3622 Datasheet Page 6 FDM3622 Datasheet Page 7 FDM3622 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDM3622 Datasheet
  • where to find FDM3622
  • ON Semiconductor

  • ON Semiconductor FDM3622
  • FDM3622 PDF Datasheet
  • FDM3622 Stock

  • FDM3622 Pinout
  • Datasheet FDM3622
  • FDM3622 Supplier

  • ON Semiconductor Distributor
  • FDM3622 Price
  • FDM3622 Distributor

FDM3622 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1090pF @ 25V
FET Feature-
Power Dissipation (Max)2.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MLP (3.3x3.3)
Package / Case8-PowerWDFN

The Products You May Be Interested In

STP77N6F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 38.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

FET Feature

-

Power Dissipation (Max)

80W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 7.5A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3250pF @ 25V

FET Feature

-

Power Dissipation (Max)

690W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

US5U29TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

390mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TUMT5

Package / Case

6-SMD (5 Leads), Flat Lead

APTM120UM95FAG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

103A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

114mOhm @ 51.5A, 10V

Vgs(th) (Max) @ Id

5V @ 15mA

Gate Charge (Qg) (Max) @ Vgs

1122nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

30900pF @ 25V

FET Feature

-

Power Dissipation (Max)

2272W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP6

Package / Case

SP6

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

120mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4335pF @ 25V

FET Feature

-

Power Dissipation (Max)

960W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

Recently Sold

AD7305BRZ

AD7305BRZ

Analog Devices

IC DAC 8BIT V-OUT 20SOIC

FMMT625TA

FMMT625TA

Diodes Incorporated

TRANS NPN 150V 1A SOT23-3

SI7421DN-T1-E3

SI7421DN-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 6.4A 1212-8

AD8138ARM

AD8138ARM

Analog Devices

IC AMP DIFF LDIST LP 95MA 8MSOP

LM7824ACT

LM7824ACT

ON Semiconductor

IC REG LINEAR 24V 1A TO220-3

BR24T16F-WE2

BR24T16F-WE2

Rohm Semiconductor

IC EEPROM 16K I2C 400KHZ 8SOP

L7805CD2T-TR

L7805CD2T-TR

STMicroelectronics

IC REG LINEAR 5V 1.5A D2PAK

CY37064P44-125JXC

CY37064P44-125JXC

Cypress Semiconductor

IC CPLD 64MC 10NS 44PLCC

74HCT04D

74HCT04D

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14SOIC

MT25QU01GBBB8E12-0SIT

MT25QU01GBBB8E12-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 166MHZ TBGA

IRGP4750D-EPBF

IRGP4750D-EPBF

Infineon Technologies

IGBT 650V 70A 273W TO247AD

AD7606BSTZ

AD7606BSTZ

Analog Devices

IC DAS/ADC 16BIT 200K 64LQFP