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FQB33N10TM

FQB33N10TM

For Reference Only

Part Number FQB33N10TM
PNEDA Part # FQB33N10TM
Description MOSFET N-CH 100V 33A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB33N10TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB33N10TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB33N10TM, FQB33N10TM Datasheet (Total Pages: 10, Size: 1,056.07 KB)
PDFFQB33N10TM Datasheet Cover
FQB33N10TM Datasheet Page 2 FQB33N10TM Datasheet Page 3 FQB33N10TM Datasheet Page 4 FQB33N10TM Datasheet Page 5 FQB33N10TM Datasheet Page 6 FQB33N10TM Datasheet Page 7 FQB33N10TM Datasheet Page 8 FQB33N10TM Datasheet Page 9 FQB33N10TM Datasheet Page 10

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FQB33N10TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs52mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 127W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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