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FQPF10N20C

FQPF10N20C

For Reference Only

Part Number FQPF10N20C
PNEDA Part # FQPF10N20C
Description MOSFET N-CH 200V 9.5A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF10N20C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF10N20C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF10N20C, FQPF10N20C Datasheet (Total Pages: 12, Size: 825.35 KB)
PDFFQP10N20C Datasheet Cover
FQP10N20C Datasheet Page 2 FQP10N20C Datasheet Page 3 FQP10N20C Datasheet Page 4 FQP10N20C Datasheet Page 5 FQP10N20C Datasheet Page 6 FQP10N20C Datasheet Page 7 FQP10N20C Datasheet Page 8 FQP10N20C Datasheet Page 9 FQP10N20C Datasheet Page 10 FQP10N20C Datasheet Page 11

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FQPF10N20C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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