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FQPF10N60C

FQPF10N60C

For Reference Only

Part Number FQPF10N60C
PNEDA Part # FQPF10N60C
Description MOSFET N-CH 600V 9.5A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 22,872
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF10N60C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF10N60C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF10N60C, FQPF10N60C Datasheet (Total Pages: 12, Size: 1,470.56 KB)
PDFFQPF10N60CT Datasheet Cover
FQPF10N60CT Datasheet Page 2 FQPF10N60CT Datasheet Page 3 FQPF10N60CT Datasheet Page 4 FQPF10N60CT Datasheet Page 5 FQPF10N60CT Datasheet Page 6 FQPF10N60CT Datasheet Page 7 FQPF10N60CT Datasheet Page 8 FQPF10N60CT Datasheet Page 9 FQPF10N60CT Datasheet Page 10 FQPF10N60CT Datasheet Page 11

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FQPF10N60C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2040pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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