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FQPF7N80C

FQPF7N80C

For Reference Only

Part Number FQPF7N80C
PNEDA Part # FQPF7N80C
Description MOSFET N-CH 800V 6.6A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,720
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF7N80C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF7N80C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF7N80C, FQPF7N80C Datasheet (Total Pages: 12, Size: 1,008.8 KB)
PDFFQPF7N80C Datasheet Cover
FQPF7N80C Datasheet Page 2 FQPF7N80C Datasheet Page 3 FQPF7N80C Datasheet Page 4 FQPF7N80C Datasheet Page 5 FQPF7N80C Datasheet Page 6 FQPF7N80C Datasheet Page 7 FQPF7N80C Datasheet Page 8 FQPF7N80C Datasheet Page 9 FQPF7N80C Datasheet Page 10 FQPF7N80C Datasheet Page 11

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FQPF7N80C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1680pF @ 25V
FET Feature-
Power Dissipation (Max)56W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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