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FQPF8N80C

FQPF8N80C

For Reference Only

Part Number FQPF8N80C
PNEDA Part # FQPF8N80C
Description MOSFET N-CH 800V 8A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 17,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF8N80C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF8N80C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF8N80C, FQPF8N80C Datasheet (Total Pages: 13, Size: 1,267.39 KB)
PDFFQPF8N80CYDTU Datasheet Cover
FQPF8N80CYDTU Datasheet Page 2 FQPF8N80CYDTU Datasheet Page 3 FQPF8N80CYDTU Datasheet Page 4 FQPF8N80CYDTU Datasheet Page 5 FQPF8N80CYDTU Datasheet Page 6 FQPF8N80CYDTU Datasheet Page 7 FQPF8N80CYDTU Datasheet Page 8 FQPF8N80CYDTU Datasheet Page 9 FQPF8N80CYDTU Datasheet Page 10 FQPF8N80CYDTU Datasheet Page 11

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FQPF8N80C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.55Ohm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2050pF @ 25V
FET Feature-
Power Dissipation (Max)59W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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