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FQPF9P25YDTU

FQPF9P25YDTU

For Reference Only

Part Number FQPF9P25YDTU
PNEDA Part # FQPF9P25YDTU
Description MOSFET P-CH 250V 6A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF9P25YDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF9P25YDTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF9P25YDTU, FQPF9P25YDTU Datasheet (Total Pages: 9, Size: 3,619.85 KB)
PDFFQPF9P25YDTU Datasheet Cover
FQPF9P25YDTU Datasheet Page 2 FQPF9P25YDTU Datasheet Page 3 FQPF9P25YDTU Datasheet Page 4 FQPF9P25YDTU Datasheet Page 5 FQPF9P25YDTU Datasheet Page 6 FQPF9P25YDTU Datasheet Page 7 FQPF9P25YDTU Datasheet Page 8 FQPF9P25YDTU Datasheet Page 9

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FQPF9P25YDTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs620mOhm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1180pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3 (Y-Forming)
Package / CaseTO-220-3 Full Pack, Formed Leads

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