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H11B1VM

H11B1VM

For Reference Only

Part Number H11B1VM
PNEDA Part # H11B1VM
Description OPTOISO 4.17KV DARL W/BASE 6DIP
Manufacturer ON Semiconductor
Unit Price
1 ---------- $12.2875
100 ---------- $11.7115
250 ---------- $11.1355
500 ---------- $10.5596
750 ---------- $10.0796
1,000 ---------- $9.5996
In Stock 4,313
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

H11B1VM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberH11B1VM
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
H11B1VM, H11B1VM Datasheet (Total Pages: 14, Size: 399.52 KB)
PDF4N29TVM Datasheet Cover
4N29TVM Datasheet Page 2 4N29TVM Datasheet Page 3 4N29TVM Datasheet Page 4 4N29TVM Datasheet Page 5 4N29TVM Datasheet Page 6 4N29TVM Datasheet Page 7 4N29TVM Datasheet Page 8 4N29TVM Datasheet Page 9 4N29TVM Datasheet Page 10 4N29TVM Datasheet Page 11

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H11B1VM Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)500% @ 1mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)25µs, 18µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)30V
Current - Output / Channel150mA
Voltage - Forward (Vf) (Typ)1.2V
Current - DC Forward (If) (Max)80mA
Vce Saturation (Max)1V
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

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